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features mechanical data maximum ratings and electrical characteristics case : jedec to -220a c molded plastic body t erminals : l ead solderable per mil -std -750,method 2026 p olarity : as mark ed mounting p osition : any w eight : 0.08ounce, 2.24 gram (r atings at 25 c ambient temperature unless other wise specified ,single phase ,half wave ,resistive or inductive load. f or capacitive load,derate by 20%.) dimensions in inches and (millimeters) plastic pack age has under writers l aborator y flammability classification 94v -0 metal silicon junction ,majority carrier conductionguard ring for over voltage protection l ow power loss ,high efficiency high current capability ,l ow for ward voltage drop single rectifier constructionhigh surge capability f or use in low voltage ,high frequency inver ters, free wheeling ,and polarity protection applicationshigh temperature soldering guaranteed:260 c/10 seconds, 0.25"(6.35mm)from case component in accordance to r ohs 2002 / 95 / ec and weee 2002 / 96 / ec r s e m i c o n d u c t o r j f s r 6 6 0 1- 66 s r 6 2 0 t h r u s r 6 2 0 0 ( s i n g l e c h i p ) schottky barrier rectifier reverse voltage - 20 to200 volts forward current - 6.0amperes notes : 1.pulse test: 300 s pulse width,1% duty cycle 2.thermal resistance from junction to lead ver tical p .c.b. mounted , 0.375"(9.5mm)lead length 3.measured at 1mhz and reverse voltage of 4.0volts maximum repetitive peak reverse voltage v rrm v olts v olts v olts v olts m a a mps a mps v rms v dc i (a v) i f sm t stg v f i r c j t j r ja r jl maximum rms voltage maximum dc blocking voltage maximum average for ward rectified current 0.375"(9.5mm) lead length(see fig.1) maximum instantaneous for ward voltage at 6.0 a(note 1 ) t =25 c t =100 c a a t ypical thermal resistance (note 2) t ypical junction capacitance(note 3) operating junction temperature range storage temperature range maximum instantaneous reverse current at rated dc blockingvoltage(note 1) p eak for ward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method at rated t l ) 6.0 150.0 -65 to+125 -65 to+150 -65 to+150 400 500 25.0 8.0 0 . 5 25 50 p f c/w c c 20 14 20 30 21 30 40 28 40 50 35 50 60 42 60 80 57 80 100 71 100 symbols units sr 620 sr 630 sr 640 sr 650 sr 660 sr 680 sr 6a0 sr 6200 sr 6150 200 140 200 150 105 150 t o-220ac 0.635(16.13) 1.161(29.50) 0.160(4.05) 0.105(2.67) 0.208(5.28) 0.037(0.94) 0.113(2.88) 0.161(4.10) 0.410(10.41) 0.610(15.50) 0.114(2.90) 0.055(1.39) 0.185(4.70) 0.145(3.68) 0.380(8.89) 0.590(14.22) 0.022(0.58) 0.625(15.87) 1.106(28.10) 0.140(3.55) 0.095(2.41) 0.192(4.88) 0.027(0.68) 0.102(2.60) 0.148(3.74) dia 0.390(9.91) 0.571(14.50) 0.098(2.50) 0.045(1.14) 0.175(4.44) 0.135(3.43) 0.330(8.38) 0.512(13.00) 0.014(0.35) 0.415(10.54) max jinan jingheng co., l td. no.51 heping road jinan pr china tel:86-531-86943657 f ax:86-531-86947096 www .jifusemicon.com 0 . 60 0.75 0.85 0.95 0.90
r at i n g s a n d c h a r a c t e r i s t i c c u r v e s s r 6 2 0 t h r u s r 6 2 0 0 ( s i n g l e c h i p ) 0.01 0.00 1 0.01 1 0.1 10 20 0.1 1 25 50 75 100 125 150 175 50 10 0 20 0 40 60 80 100 1 10 100 0.2 0.1 0.3 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 50 100 150 0 2.0 6.0 4.0 10 8.0 fig .1- fo rw ar d cu rr en t d er at in g cu rv e fig .2- m ax im um n on -r ep et itiv e p ea k fo rw ar d su rg e c ur re nt fig .3- ty pic al in st an ta ne ou s f or w ar d c ha ra ct er ist ic s fig .4- ty pic al re ve rs e c ha ra ct er ist ic s a v e r a g e f o r w a r d c u r r e n t a m p e r e s i n s t a n t a n e o u s f o r w a r d c u r r e n t ( a m p e r e s ) i n s t a n t a n e o u s r e v e r s e c u r r e n t m i l l ( a m p e r e s ) p e a k f o r w a r d s u r g e c u r r e n t ( a m p e r e s ) inst ant ane ous for w ard v ol t age (v ol ts) reverse vol t age. vol ts t , pu lse du ra tio n ,s ec. perc ent of ra ted pea k re vers e v ol t age % num ber of c y cles a t 60 hz lea d t emp era tur e ( c) t j =25 c t j =12 5 c puls e wi dth= 300 s 1% d uty c yc le t j =t j max 8.3m s sin gle half sine - w a ve (jed ec m etho d) t j =25 c resis tive or i ndu ctiv e l o ad 11 10 0.1 0.1 0.1 0.01 1 1 10 10 100 100 100 40 4000 1000 100 fig .5- ty pic al ju nc tio n ca pa ci ta nc e fig .6- ty pic al tr an sie nt th er m al im pe da nc e j u n c t i o n c a p a c i t a n c e ( p f ) t r a n s i e n t t h e r m a l i m p e d a n c e , c / w t j =25 c f=1. 0mh z vsig= 50mv p-p sr62 0 s r640 sr65 0 sr6 200 sr62 0 s r640 sr65 0 sr6 200 sr62 0 s r640 sr65 0 sr6 200 sr62 0 s r640 sr65 0 sr6 200 t j =75 c t j =12 5 c 1- 67 jinan jingheng co., l td. no.51 heping road jinan pr china tel:86-531-86943657 f ax:86-531-86947096 www .jifusemicon.com

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